Interstitial defect reactions in silicon

Materials Research Society Symposium - Proceedings

Volumn 442, Issue , 1997, Pages 231-236

  Zhao, S ^a   Agarwal, A M ^a   Benton, J L ^a   Gilmer, G H ^a   Kimerling, L C ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; FLUOROCARBONS; ION IMPLANTATION; OXYGEN; PHOSPHORUS; POINT DEFECTS; REACTION KINETICS; REACTIVE ION ETCHING; SEMICONDUCTING BORON;

ELECTRON BEAM IRRADIATION; INTERSTITIAL DEFECT REACTION; NONLINEAR SYSTEM MODEL;

SEMICONDUCTING SILICON;

EID: 0030647709     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)