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Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 207-212

Infrared absorption from low carbon concentration, low dose, annealed CZ silicon

(3) Inoue, N a Goto, Y b Sugiyama, T c

a Osaka City University (Japan)

b TOYOTA MOTOR CORPORATION (Japan)

c Rd Management Section (Japan)

Author keywords

Carbon; CZ silicon; Electron irradiation; He; Infrared absorption

Indexed keywords

COMPLEXATION; CONCENTRATION (PROCESS); ELECTRON IRRADIATION; INFRARED ABSORPTION; RAPID THERMAL ANNEALING; BIOLOGICAL RADIATION EFFECTS; CARBON; DEFECTS; HELIUM; LIGHT ABSORPTION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; VANADIUM DIOXIDE;

ABSORPTION LINES; LOW CARBON CONCENTRATION; LOW DOSE IRRADIATION; CZ SILICON; IR ABSORPTION; LOW CARBON; LOW DOSE;

SEMICONDUCTING SILICON; ANNEALING;

EID: 38549144682 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: None Document Type: Conference Paper

Times cited : (5)

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