Comprehensively study on a ballistic-injection AND-type flash memory cell

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 2 A, 2006, Pages 674-679

  Wu, Meng Yi ^a   Dai, Sheng Huei ^a   Hu, Shu Fen ^b   Yang, Evans Ching Sung ^c   Hsu, Charles Ching Hsiang ^c   King, Ya Chin ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c EMEMORY TECHNOLOGY INC   (Taiwan)

Author keywords

AND memory; Ballistic; Flash memory; Non volNarkatile memory; Split gate flash

Indexed keywords

BALLISTICS; ELECTRIC POTENTIAL; RELIABILITY;

AND MEMORY; SPLIT GATE FLASH;

FLASH MEMORY;

EID: 32244446643     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.45.674     Document Type: Article

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