GaInAsP/InP partially strain-compensated multiple-quantum-wire lasers fabricated by dry etching and regrowth processes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 A, 2004, Pages 3401-3409

  Yagi, Hideki ^a   Sano, Takuya ^a   Ohira, Kazuya ^a   Plumwongrot, Dhanorm ^a   Maruyama, Takeo ^a,b   Haque, Anisul ^a,b   Tamura, Shigeo ^a   Arai, Shigehisa ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

CH2 H2 RIE; GaInAsP InP; OMVPE regrowth; Quantum wire laser; Strain compensated quantum well structure

Indexed keywords

ANNEALING; CURRENT DENSITY; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; HEAT SINKS; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SPONTANEOUS EMISSION; THICKNESS MEASUREMENT; THRESHOLD VOLTAGE;

CH4/H2-RIE; GAINASP/INP; OMVPE REGROWTH; QUANTUM WIRE LASERS; STRAIN-COMPENSATED QUANTUM-WELL STRUCTURES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 4344699088     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.3401     Document Type: Article

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