High characteristic temperature (T0= 243 K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1270-1273

  Ohno, Yasuhide ^a   Kanamori, Hironori ^a   Shimomura, Satoshi ^a   Hiyamizu, Satoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CURRENT DENSITY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; PHOTOLUMINESCENCE; POLARIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

QUANTUM WIRE LASERS;

QUANTUM WELL LASERS;

EID: 0035998578     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1456520     Document Type: Conference Paper

References (19)