GaInAsP/InP compressively strained quantum-wire lasers fabricated by electron beam lithography and 2-step organometallic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 9 A, 1998, Pages 4792-4800

  Kojima, Takashi ^a   Tamura, Munehisa ^a   Nakaya, Hiroyuki ^a   Tanaka, Suguru ^a   Tamura, Shigeo ^a   Arai, Shigehisa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

EB lithography; GaInAsP InP; OMVPE; Quantum well; Quantum wire; Quantum wire DFB; Semiconductor laser; Strained quantum well

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL VARIABLES MEASUREMENT; QUANTUM THEORY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE;

COMPRESSIVELY STRAINED QUANTUM WIRE LASERS; EMISSION EFFICIENCY; LASING PROPERTIES; TEMPERATURE DEPENDENCE; THRESHOLD CURRENT; WET CHEMICAL ETCHING;

QUANTUM WELL LASERS;

EID: 0032154254     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4792     Document Type: Article

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