Sidewall recombination velocity in GaInAsP/InP quantum-well lasers with wire-like active region fabricated by wet-chemical etching and organo-metallic vapor-phase-epitaxial regrowth

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12, 1998, Pages 6569-6574

  Tamura, Munehisa ^a   Kojima, Takashi ^a   Ando, Toshikazu ^a   Nunoya, Nobuhiro ^a   Tamura, Shigeo ^a   Arai, Shigehisa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaInAsP InP; Nonradiative recombination; OMVPE regrowth; Quantum well laser; Quantum wire laser; Semiconductor laser; Wet chemical etching

Indexed keywords

ELECTRIC CURRENTS; ETCHING; LASER THEORY; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

WET-CHEMICAL ETCHING;

QUANTUM WELL LASERS;

EID: 0032289888     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6569     Document Type: Article

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