Reliable operation of GaInAsP/InP distributed feedback laser with wirelike active regions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 2 A, 2003, Pages 475-476

  Ohira, Kazuya ^a   Nunoya, Nobuhiro ^a   Yagi, Hideki ^a   Muranushi, Kengo ^a   Onomura, Akihiro ^a   Tamura, Shigeo ^a   Arai, Shigehisa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CH4 H2 RIE; Distributed feedback laser; EB lithography; GaInAsP InP; OMVPE regrowth

Indexed keywords

CONTINUOUS WAVE LASERS; DEGRADATION; ELECTRON BEAM LITHOGRAPHY; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

GALLIUM INDIUM ARSENIDE PHOSPHIDE; THRESHOLD VALUE; WIRELIKE ACTIVE REGIONS;

DISTRIBUTED FEEDBACK LASERS;

EID: 0038564303     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.475     Document Type: Article

References (6)

1. K. Uomi, T. Tsuchiya, M. Komori, A. Oka, T. Kawano and A. Oishi: IEEE J. Sel. Top. Quantum Electron. 1 (1995) 203.
2. D. M. Cutrer and K. Y. Lee: IEEE Photonics Technol. Lett. 7 (1995) 4.
3. M. Nakamura, N. Nunoya, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura and S. Arai: Electron. Lett. 36 (2000) 639.
4. N. Nunoya, M. Nakamura, H. Yasumoto, M. Morshed, K. Fukuda, S. Tamura and S. Arai: Electron. Lett. 36 (2000) 1213.
5. N. Nunoya, M. Morshed, M. Nakamura, S. Tamura, S. Arai: 17th IEEE Int. Semiconductor Laser Conf., Monterey, Sept. 2000, TuB1, p. 45.
6. N. Nunoya, M. Nakamura, M. Morshed, S. Tamura and S. Arai: IEEE J. Sel. Top. Quantum Electron. 7 (2001) 249.