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Volumn 39, Issue 10 B, 2000, Pages
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Low threshold current density operation of GaInAsP/InP lasers with strain-compensated multiple-layered wirelike active regions
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
ELECTRON BEAM LITHOGRAPHY;
METALLORGANIC VAPOR PHASE EPITAXY;
MULTILAYERS;
REACTIVE ION ETCHING;
SEMICONDUCTING FILMS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WIRES;
STRAIN;
LATTICE MISMATCH;
QUANTUM WIRE LASERS;
RECOMBINATION TRAPS;
QUANTUM WELL LASERS;
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EID: 0034291887
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.39.l1042 Document Type: Article |
Times cited : (24)
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References (11)
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