메뉴 건너뛰기




Volumn 39, Issue 10 B, 2000, Pages

Low threshold current density operation of GaInAsP/InP lasers with strain-compensated multiple-layered wirelike active regions

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRON BEAM LITHOGRAPHY; METALLORGANIC VAPOR PHASE EPITAXY; MULTILAYERS; REACTIVE ION ETCHING; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; STRAIN;

EID: 0034291887     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l1042     Document Type: Article
Times cited : (24)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.