Electronic band structures of GaInAsP/InP vertically stacked multiple quantum wires with strain-compensating barriers

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 2018-2023

  Haque, Anisul ^a,b,c   Yagi, Hideki ^a   Sano, Takuya ^a   Maruyama, Takeo ^a,b   Aral, Shigehisa ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL LATTICES; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SPECTRUM ANALYSIS; STRAIN MEASUREMENT; TENSILE TESTING;

MULTIWELL LAYERS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0042510980     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1590061     Document Type: Article

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