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Volumn 5375, Issue PART 1, 2004, Pages 41-50

Simultaneous critical dimension and overlay measurements on a SEM through target design for inline manufacturing lithography control

Author keywords

CD SEM; Critical Dimension; OL; Overlay; Target design

Indexed keywords

CD SEM; CRITICAL DIMENSION (CD); OVERLAY (OL); TARGET DESIGN;

EID: 4344698738     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.533756     Document Type: Conference Paper
Times cited : (7)

References (7)
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    • 1 lithography", Christopher P. Ausschnitt, Proc. SPIE Vol. 4344, p. 1-11, Metrology, Inspection, and Process Control for Microlithography XV 2001
    • (2001) Proc. SPIE , vol.4344 , pp. 1-11
    • Ausschnitt, C.P.1
  • 2
    • 0141723696 scopus 로고    scopus 로고
    • Scatterometry-based overlay metrology
    • Metrology, Inspection, and Process Control for Microlithography XVII
    • "Scatterometry-based overlay metrology", Hsu Ting Huang, Gayathri Raghavendra, Apo Sezginer, Kenneth Johnson, Fred E Stanke, Michelle L Zimmerman, Cristina Cheung, Makoto Miyagi, Bhanwar Singh, Proc. SPIE Vol. 5038, p. 126-137, Metrology, Inspection, and Process Control for Microlithography XVII 2003
    • (2003) Proc. SPIE , vol.5038 , pp. 126-137
    • Huang, H.T.1    Raghavendra, G.2    Sezginer, A.3    Johnson, K.4    Stanke, F.E.5    Zimmerman, M.L.6    Cheung, C.7    Miyagi, M.8    Singh, B.9
  • 3
    • 0141500274 scopus 로고    scopus 로고
    • Novel diffraction-based spectroscopic method for overlay metrology
    • Metrology, Inspection, and Process Control for Microlithography XVII
    • "Novel diffraction-based spectroscopic method for overlay metrology", Weidong Yang, Roger Lowe-Webb, Silvio Rabello, Jiangtao Hu, Je-Yi Lin, John D. Heaton, Mircea V. Dusa, Arie J. den Boef, Maurits van der Schaar, Adolph Hunter, Proc. SPIE Vol. 5038, p. 200-207, Metrology, Inspection, and Process Control for Microlithography XVII 2003
    • (2003) Proc. SPIE , vol.5038 , pp. 200-207
    • Yang, W.1    Lowe-Webb, R.2    Rabello, S.3    Hu, J.4    Lin, J.-Y.5    Heaton, J.D.6    Dusa, M.V.7    Den Boef, A.J.8    Van Schaar, M.D.9    Hunter, A.10
  • 4
    • 0141611995 scopus 로고    scopus 로고
    • Performance study of new segmented overlay marks for advanced wafer processing
    • Metrology, Inspection, and Process Control for Microlithography XVII
    • "Performance study of new segmented overlay marks for advanced wafer processing", Mike Adel, John A. Allgair, David C. Benoit, Mark Ghinovker, Elyakim Kassel, C. Nelson, John C. Robinson, Gary S. Seligman, Proc. SPIE Vol. 5038, p. 453-463, Metrology, Inspection, and Process Control for Microlithography XVII 2003
    • (2003) Proc. SPIE , vol.5038 , pp. 453-463
    • Adel, M.1    Allgair, J.A.2    Benoit, D.C.3    Ghinovker, M.4    Kassel, E.5    Nelson, C.6    Robinson, J.C.7    Seligman, G.S.8
  • 5
    • 0141612798 scopus 로고    scopus 로고
    • Comparison of pattern placement errors as measured using traditional overlay targets and design rule structures
    • Metrology, Inspection, and Process Control for Microlithography XVII
    • "Comparison of pattern placement errors as measured using traditional overlay targets and design rule structures", Philippe Leray, David W. Laidler, Ivan K. Pollentier, Proc. SPIE Vol. 5038, p. 49-60, Metrology, Inspection, and Process Control for Microlithography XVII 2003
    • (2003) Proc. SPIE , vol.5038 , pp. 49-60
    • Leray, P.1    Laidler, D.W.2    Pollentier, I.K.3
  • 6
    • 0032662134 scopus 로고    scopus 로고
    • Comparison of optical, SEM, and AFM overlay measurement
    • Metrology, Inspection, and Process Control for Microlithography XIII
    • "Comparison of optical, SEM, and AFM overlay measurement", V.C. Jai Prakash, Christopher J. Gould, Proc. SPIE Vol. 3677, p. 229-238, Metrology, Inspection, and Process Control for Microlithography XIII 1999
    • (1999) Proc. SPIE , vol.3677 , pp. 229-238
    • Jai Prakash, V.C.1    Gould, C.J.2
  • 7
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    • Scatterometry measurement precision and accuracy below 70 nm
    • Metrology, Inspection, and Process Control for Microlithography XVII
    • "Scatterometry measurement precision and accuracy below 70 nm", Matthew Sendelbach, Charles N. Archie, Proc. SPIE Vol. 5038, p. 224-238, Metrology, Inspection, and Process Control for Microlithography XVII 2003
    • (2003) Proc. SPIE , vol.5038 , pp. 224-238
    • Sendelbach, M.1    Archie, C.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.