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Volumn 5038 I, Issue , 2003, Pages 49-60

Comparison of pattern placement errors as measured using traditional overlay targets and design rule structures

Author keywords

CD SEM overlay metrology; Distortion; Overlay; Pattern placement error; Precision

Indexed keywords

ABERRATIONS; ALGORITHMS; CALCULATIONS; LENSES; MASKS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

EID: 0141612798     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.482817     Document Type: Conference Paper
Times cited : (4)

References (5)
  • 1
    • 26344443967 scopus 로고    scopus 로고
    • Optimization of overlay markers to limit the measurement error induced during exposure by lens aberration effect
    • A. Luci, E.G. Ballarin, "Optimization of Overlay markers to limit the measurement error induced during exposure by lens aberration effect", SPIE 2002, 4689-41.
    • (2002) SPIE
    • Luci, A.1    Ballarin, E.G.2
  • 3
    • 0036030186 scopus 로고    scopus 로고
    • Advances in process overlay - ATHENA™ alignment system performance on critical process layer
    • D. Laidler, H. Megens, S. Lalbahadoersing, R. van Haren, F. Bornebroek, "Advances in process overlay - ATHENA™ alignment system performance on critical process layer", SPIE 2002, 4689-43.
    • (2002) SPIE
    • Laidler, D.1    Megens, H.2    Lalbahadoersing, S.3    Van Haren, R.4    Bornebroek, F.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.