From compliance to control: Off-roadmap metrology for low-k1 lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4344, Issue , 2001, Pages 1-11

  Ausschnitt, C P ^a  

^a IBM   (United States)

Author keywords

Critical dimension; Dose; Focus; Lithography; Metrology; Overlay; Process control

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPACT DISKS; PROCESS CONTROL; SAMPLING; SCANNING ELECTRON MICROSCOPY;

SCATTEROMETRY;

LITHOGRAPHY;

EID: 0034762587     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436719     Document Type: Conference Paper

References (14)

1. Process window metrology
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4. Seeing the forest for the trees: A new approach to CD control
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7. Latent image metrology for productin wafer steppers
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9. Automatic in-situ focus monitor using line shortening effect
10. New overlay pattern design for real-time focus monitor
11. Distinguishing dose and defocus for in-line lithography control