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Volumn 5038 I, Issue , 2003, Pages 200-207

A novel diffraction based spectroscopic method for overlay metrology

Author keywords

Diffraction; Diffraction efficiency; OCD; Optical metrology; Overlay metrology; Process control; Scatterometry; Spectrum

Indexed keywords

DIFFRACTION GRATINGS; IMAGING SYSTEMS; MEASUREMENT ERRORS; NANOTECHNOLOGY; OPTICAL CORRELATION; OPTICAL PARAMETRIC OSCILLATORS; OPTICAL VARIABLES MEASUREMENT; SILICON WAFERS; STATISTICAL OPTICS;

EID: 0141500274     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.483476     Document Type: Conference Paper
Times cited : (68)

References (5)
  • 3
    • 26544475876 scopus 로고    scopus 로고
    • Applied materials line-profile and critical dimension measurements using a normal incidence optical metrology system
    • Nanometrics, Inc.
    • W. Yang, V. G. Zhuang, R. Lowe-Webb, Nanometrics, Inc.; D. Mui, W. Liou, H. Sasano, Applied Materials Line-profile and critical dimension measurements using a normal incidence optical metrology system
    • Yang, W.1    Zhuang, V.G.2    Lowe-Webb, R.3    Mui, D.4    Liu, W.5    Sasano, H.6
  • 5
    • 0036030586 scopus 로고    scopus 로고
    • Normal incidence spectroscopic ellipsometry and polarized reflectometry for measurement and control of photoresist critical dimension
    • Nanometrics Inc.; ASML (Netherlands)
    • Normal incidence spectroscopic ellipsometry and polarized reflectometry for measurement and control of photoresist critical dimension. J. M. Holden, T. Gubiotti, W. A. McGahan, Nanometrics Inc.; T. Kiers, ASML (Netherlands), Proc. SPIE, vol. 4689, pp. 1110-1121, 2002.
    • (2002) Proc. SPIE , vol.4689 , pp. 1110-1121
    • Holden, J.M.1    Gubiotti, T.2    McGahan, W.A.3    Kiers, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.