Characterization of neon implantation damage in silicon

Materials Science and Engineering: B

Volumn 112, Issue 2-3 SPEC. ISS., 2004, Pages 111-115

  Oliviero, E ^a   Peripolli, S ^a   Fichtner, P F P ^a   Amaral, L ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

Bubbles; Cavities; Extended defects; Ion implantation; Neon; Silicon

Indexed keywords

AMORPHIZATION; ANNEALING; BUBBLE FORMATION; DEFECTS; DOSIMETRY; ION IMPLANTATION; NEON; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

CAVITIES; DAMAGE ACCUMULATION; EXTENDED DEFECTS; LATTICE DAMAGE;

SILICON;

EID: 4344677632     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.05.014     Document Type: Article

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