Implantation temperature dependence of He bubble formation in Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 756-760

  Da Silva, D L ^a   Fichtner, P F P ^a   Behar, M ^a   Peeva, A ^b   Koegler, R ^b   Skorupa, W ^b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Bubbles; Defects; Helium; Ion implantation; Radiation effects; Silicon; Voids

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; HELIUM; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ELASTIC RECOIL DETECTION ANALYSIS;

BUBBLE FORMATION;

EID: 0036570192     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01260-5     Document Type: Conference Paper

References (15)