In-situ observation of silicon carbide sublimation growth by X-ray topography

Journal of Crystal Growth

Volumn 222, Issue 3, 2001, Pages 579-585

  Kato, Tomohisa ^a   Oyanagi, Naoki ^b   Yamaguchi, Hirotaka ^a   Nishizawa, Shin Ichi ^a   Nasir Khan, M ^a   Kitou, Yasuo ^b   Arai, Kazuo ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b Advanced Power Device Laboratory   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); IN SITU PROCESSING; OPTICAL MICROSCOPY; SUBLIMATION; X RAY ANALYSIS;

MODIFIED LELY METHOD; X RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 0035148350     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00958-1     Document Type: Article

References (15)

1. Tairov Y.M., Tsvetkov V.F. J. Crystal Growth. 43(2):1978;209.
2. Müller St.G., Glass R.C., Hobgood H.M., Tsvetkov V.F., Brady M., Henshall D., Jenny J.R., Malta D., Carter C.H. Jr. J. Crystal Growth. 211:2000;325.
3. Stein R.A. Physica B. 185:1993;211.
4. Anikin M., Pons M., Chourou K., Chaix O., Bluet J.M., Lauer V., Madar R. Mater. Sci. Forum. 264-268:1998;45.
5. Chikawa J. J. Crystal Growth. 24/25:1974;61.
6. Wellmann P.J., Bickermann M., Hofmann D., Kadinski L., Selder M., Straubinger T.L., Winnacker A. J. Crystal Growth. 216:2000;263.
7. Yamaguchi H., Nishizawa S., Kato T., Oyanagi N., Bahng W., Yoshida S., Arai K., Machitani Y., Kikuchi T. Rev. Sci. Instrum. 71:2000;2829.
8. Kato T., Oyanagi N., Yamaguchi H., Takano Y., Nishizawa S., Arai K. Mater. Sci. Forum. 338-342:2000;457.
9. Lely J.A. Ber. Dtsch. Keram. Ges. 32:1955;229.
10. Oyanagi N., Kato T., Yamaguchi H., Nishizawa S., Arai K. Mater. Sci. Forum. 338-342:2000;75.
11. Bahng W., Kitou Y., Nishizawa S., Yamagichi H., Nasir Khan M., Oyanagi N., Nishino S., Arai K. J. Crystal Growth. 209:2000;767.
12. Frank F.C. Acta Crystallogr. 4:1951;497.
13. Kato T., Ohsato H., Okamoto A., Sugiyama N., Okuda T. Mater. Sci. Eng. B. 57:1999;147.
14. Yamaguchi H., Nishizawa S., Bahng W., Fukuda K., Yoshida S., Arai K., Takano Y. Mater. Sci. Eng. B. 61-62:1999;221.
15. Dudley M., Wang S., Huang W., Carter C.H. Jr., Tsvetkov V.F., Fazi C. J. Phys. D: Appl. Phys. 28:1995;63.