Ferroelectric properties and leakage current characteristics of radio-frequency-sputtered SrBi2(V0.1Nb0.9) 2O9 thin films

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2181-2185

  Ezhilvalavan, S ^a   Samper, Victor ^a   Seng, Ton Wei ^b   Junmin, Xue ^b   Wang, John ^b  

^a INSTITUTE OF BIOENGINEERING AND NANOTECHNOLOGY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; FATIGUE OF MATERIALS; INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; PLATINUM COMPOUNDS; POLARIZATION; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; STRONTIUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION;

POLARIZATION SWITCHING; PROCESSING TEMPERATURE; RADIO-FREQUENCY SPUTTERING; REMNANT POLARIZATION;

FERROELECTRIC CERAMICS;

EID: 4344629516     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1766096     Document Type: Article

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