Leakage current characteristics of laser-ablated SrBi2Nb 2O9 thin films

Applied Physics Letters

Volumn 81, Issue 5, 2002, Pages 880-882

  Das, Rasmi R ^a   Bhattacharya, P ^a   Perez W ^a   Katiyar, Ram S ^a   Bhalla, A S ^b  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION CURRENT; CURRENT CHARACTERISTIC; CURRENT CONDUCTION MECHANISMS; DC LEAKAGE CURRENT; ELEVATED TEMPERATURE; OHMIC BEHAVIOR; PLATINIZED SILICON SUBSTRATES; POWER LAW; RICHARDSON; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY EMISSION MODEL; TIME-DEPENDENT;

DC POWER TRANSMISSION; ELECTRIC CURRENTS; LEAKAGE CURRENTS; PULSED LASERS; SCHOTTKY BARRIER DIODES; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955996795     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1495880     Document Type: Article

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