Film structure and ferroelectric properties of vanadium-doped Sr 0.8Bi 2.3Ta 2O 9 thin films

Journal of Applied Physics

Volumn 91, Issue 12, 2002, Pages 10032-10037

  Chen, San Yuan ^a   Lan, Bang Chiang ^a   Taso, Chang Sheng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; FATIGUE ENDURANCES; FERROELECTRIC PROPERTY; FILM STRUCTURE; GRAIN SIZE; METALORGANIC DECOMPOSITION METHOD; PARTIAL SUBSTITUTION; STRONTIUM BISMUTH TANTALATE; VANADIUM SUBSTITUTION;

BISMUTH; ELECTRIC FIELDS; STRONTIUM; TANTALUM;

VANADIUM;

EID: 0037098019     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1480110     Document Type: Article

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