Control of bismuth volatility in SBT by vanadium doping

Integrated Ferroelectrics

Volumn 39, Issue 1-4, 2001, Pages 61-71

  Barz, Robert ^a,c   Neumayer, Deborah A ^b   Majhi, Prashant ^a   Wang, Changgong ^a   Dey, Sandwip K ^a  

^a AZ 85281   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c AIXTRON Inc   (Germany)

Author keywords

Bi volatility; Forming gas anneal; SBT

Indexed keywords

BOTTOM ELECTRODES; FORMING GAS ANNEAL;

BINDING ENERGY; BISMUTH; DIFFUSION; DOPING (ADDITIVES); SCANNING ELECTRON MICROSCOPY; VANADIUM; X RAY DIFFRACTION ANALYSIS;

VAPORIZATION;

EID: 4344695522     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580108011928     Document Type: Conference Paper

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