Properties of high k gate dielectric gadolinium oxide deposited on Si (1 0 0) by dual ion beam deposition (DIBD)

Journal of Crystal Growth

Volumn 270, Issue 1-2, 2004, Pages 21-29

  Zhou, Jian Ping ^a,c   Chai, Chun Lin ^a   Yang, Shao Yan ^a   Liu, Zhi Kai ^a   Song, Shu Lin ^a   Li, Yan Li ^a   Chen, Nuo Fu ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF MECHANICS   (China)

^c TSINGHUA UNIVERSITY   (China)

Author keywords

A1. Atomic force microscopy; A1. Auger electron spectroscopy; A1. Crystal structures; A1. X ray photoelectron spectroscopy; A3. Ion beam deposition; B1. Oxides

Indexed keywords

DUAL ION BEAM DEPOSITION; GADOLINIUM OXIDES; SILICON TECHNOLOGY; SURFACE IMAGES;

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DIELECTRIC MATERIALS; EPITAXIAL GROWTH; GADOLINIUM COMPOUNDS; ION BEAM ASSISTED DEPOSITION; OXIDES; SILICON WAFERS; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 4344588852     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.114     Document Type: Article

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