Electrical characterization of Ta2O5 films deposited by laser reactive ablation of metallic Ta

Thin Solid Films

Volumn 340, Issue 1, 1999, Pages 164-168

  Fu, Zheng Wen ^a   Chen, Liang Yao ^a   Qin, Qi Zong ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HOLE TRAPS; INTERFACES (MATERIALS); LASER ABLATION; PULSED LASER APPLICATIONS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CAPACITANCE VOLTAGE CHARACTERISTICS; INTERFACE TRAP DENSITIES; LASER REACTIVE ABLATION; TANTALUM OXIDES; TRAP CHARGE;

TANTALUM COMPOUNDS;

EID: 0032677761     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01444-8     Document Type: Article

References (16)

1. Fujikawa H., Taga Y. J. Appl. Phys. 75:1994;2538.
2. Pignolet A., Rao G.M., Krupanidhi S.B. Thin Solid Films. 258:1995;230.
3. Kamiyama S., Lesaicherre D.Y., H. Suzuki H., et al. J. Electrochem. Soc. 140:1993;1617.
4. Devine R.A.B., Vallier L., Autun J.L., et al. Appl. Phys. Lett. 68:1996;1775.
5. Tanimoto S., Shibata N., Kuroiwa K., et al. Appl. Surf. Sci. 79/80:1994;220.
6. Ohishi T., Maekawa S., Katoh A. J. Non-Cryst. Solids. 147/148:1992;493.
7. Zhou M.F., Fu Z.W., Qin Q.Z., et al. Appl. Surf. Sci. 108:1997;399.
8. Fu Z.W., Zhou M.F., Qin Q.Z., et al. Jpn. J. Appl. Phys. 36:1997;6714.
9. Sankur H.O., Gunning W. Appl. Opt. 28:1989;2806.
10. Nishimura Y., Hiroki U., Chiai T.O., Tsuji M. Appl. Surf. Sci. 79/80:1994;65.
11. Nishimura Y., Ujita H., Tasuji M. Appl. Surf. Sci. 89:1995;393.
12. Inoue N., Kashiwabara S., Toshima S., Fujimoto R. Appl. Surf. Sci. 96:1996;656.
13. Martinet C., Devine R.A.B. J. Appl. Phys. 77:1995;4343.
14. Devine R.A.B. Appl. Phys. Lett. 68:1996;1924.
15. Roth R.S. J. Solid State Chem. 2:1970;445.
16. Warren W.L., Fleetwood D.M., Shaneyfelt M.R., et al. Appl. Phys. Lett. 64:1994;3452.