SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 197-201

Effect of processing parameters on electroless Cu seed layer properties

(8) Ee, Y C a Chen, Z a Chan, L b See, Alex K H b Law, S B b Tee, K C b Zeng, K Y c Shen, L c

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b CHARTERED SEMICONDUCTOR MANUFACTURING LTD (Singapore)

c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

Activation; Copper metallization; Electroless plating; Titanium nitride

Indexed keywords

COPPER METALLIZATION; ROOM TEMPERATURE; SHEET RESISTANCE;

CHEMICAL ACTIVATION; CRYSTAL ORIENTATION; ELECTROLESS PLATING; ELECTROPLATING; GRAIN SIZE AND SHAPE; METALLIZING; SEMICONDUCTING FILMS; TITANIUM NITRIDE;

COPPER;

EID: 4344583080 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.05.018 Document Type: Article

Times cited : (21)

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