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Volumn 32, Issue 2 III, 2004, Pages 792-798

Plasma-sheath expansion during plasma immersion ion implantation of insulating materials

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA IMMERSION; PLASMA IMPLANTATION; SHEATH DISTORTION;

EID: 4344577247     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2004.826058     Document Type: Article
Times cited : (5)

References (27)
  • 1
    • 0042633781 scopus 로고
    • Plasma source ion implantation technique for surface modification of materials
    • J. R. Conrad, J. L. Radke, R. A. Dodd, and F. J. Worzala, "Plasma source ion implantation technique for surface modification of materials," J. Appl. Phys., vol. 62, pp. 4951-4596, 1987.
    • (1987) J. Appl. Phys. , vol.62 , pp. 4596-4951
    • Conrad, J.R.1    Radke, J.L.2    Dodd, R.A.3    Worzala, F.J.4
  • 3
    • 36549096297 scopus 로고
    • Plasma immersion ion implantation using plasmas generated by radio frequency techniques
    • J. Tendys, I. J. Donnelly, M. J. Kenny, and J. A. Pollock, "Plasma immersion ion implantation using plasmas generated by radio frequency techniques," Appl. Phys. Lett., vol. 53, pp. 2143-2145, 1988.
    • (1988) Appl. Phys. Lett. , vol.53 , pp. 2143-2145
    • Tendys, J.1    Donnelly, I.J.2    Kenny, M.J.3    Pollock, J.A.4
  • 4
    • 0030288186 scopus 로고    scopus 로고
    • Plasma immersion ion implantation-A fledging technique for semiconductor processing
    • P. K. Chu, S. Qin, C. Chan, N. W. Cheung, and L. A. Larson, "Plasma immersion ion implantation-A fledging technique for semiconductor processing," Mater. Sci. Eng. R, vol. R17, pp. 207-280, 1996.
    • (1996) Mater. Sci. Eng. R , vol.R17 , pp. 207-280
    • Chu, P.K.1    Qin, S.2    Chan, C.3    Cheung, N.W.4    Larson, L.A.5
  • 5
    • 33747577711 scopus 로고
    • New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma
    • B. Mizuno, I. Nakayama, N. Aoi, M. Kubota, and T. Komeda, "New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma," Appl. Phys. Lett., vol. 53, pp. 2059-2061, 1988.
    • (1988) Appl. Phys. Lett. , vol.53 , pp. 2059-2061
    • Mizuno, B.1    Nakayama, I.2    Aoi, N.3    Kubota, M.4    Komeda, T.5
  • 6
    • 0030284591 scopus 로고    scopus 로고
    • Plasma immersion ion implantation for semiconductor processing
    • N. W. Cheung, "Plasma immersion ion implantation for semiconductor processing," Mater. Chem. Phys., vol. 46, pp. 132-139, 1996.
    • (1996) Mater. Chem. Phys. , vol.46 , pp. 132-139
    • Cheung, N.W.1
  • 7
    • 17644441834 scopus 로고    scopus 로고
    • Lateral implantation homogeneity of wedge-shaped samples treated by plasma immersion ion implantation
    • W. Ensinger, T. Hochbauer, and B. Rauschenbach, "Lateral implantation homogeneity of wedge-shaped samples treated by plasma immersion ion implantation," Surf. Coat. Technol., vol. 94-95, pp. 352-355, 1997.
    • (1997) Surf. Coat. Technol. , vol.94-95 , pp. 352-355
    • Ensinger, W.1    Hochbauer, T.2    Rauschenbach, B.3
  • 8
    • 0035241883 scopus 로고    scopus 로고
    • Surface processes and diffusion mechanisms of ion nitriding of stainless steel and aluminum
    • W. Moeller, S. Parascandola, T. Telbizova, R. Gunzel, and E. Richter, "Surface processes and diffusion mechanisms of ion nitriding of stainless steel and aluminum," Surf Coat. Technol., vol. 136, pp. 73-79, 2001.
    • (2001) Surf Coat. Technol. , vol.136 , pp. 73-79
    • Moeller, W.1    Parascandola, S.2    Telbizova, T.3    Gunzel, R.4    Richter, E.5
  • 9
    • 0036641417 scopus 로고    scopus 로고
    • Nanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantation
    • M. Ueda, C. M. Leipienski, E. C. Rangel, N. C. Cruz, and F. G. Dias, "Nanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantation," Surf. Coat. Technol., vol. 156, pp. 190-194, 2002.
    • (2002) Surf. Coat. Technol. , vol.156 , pp. 190-194
    • Ueda, M.1    Leipienski, C.M.2    Rangel, E.C.3    Cruz, N.C.4    Dias, F.G.5
  • 10
    • 0001755001 scopus 로고
    • Plasma ion implantation technology at Hughes research laboratories
    • J. N. Matossian, "Plasma ion implantation technology at Hughes research laboratories," J. Vac. Sci. Technol. B, vol. 12, pp. 850-853, 1994.
    • (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 850-853
    • Matossian, J.N.1
  • 11
    • 0036641634 scopus 로고    scopus 로고
    • Improving the biocompatibility of medical implants with plasma immersion ion implantation
    • S. Mandl and B. Rauschenbach, "Improving the biocompatibility of medical implants with plasma immersion ion implantation," Surf. Coat. Technol., vol. 156, pp. 276-283, 2002.
    • (2002) Surf. Coat. Technol. , vol.156 , pp. 276-283
    • Mandl, S.1    Rauschenbach, B.2
  • 12
    • 0036642346 scopus 로고    scopus 로고
    • Deformation behavior of titanium nitride film prepared by plasma immersion ion implantation and deposition
    • N. Huang, G. J. Wan, Y. Leng, Y. X. Leng, H. Sun, P. Yang, J. Y. Chen, J. Wang, and P. K. Chu, "Deformation behavior of titanium nitride film prepared by plasma immersion ion implantation and deposition," Surf. Coat. Technol., vol. 156, pp. 170-175, 2002.
    • (2002) Surf. Coat. Technol. , vol.156 , pp. 170-175
    • Huang, N.1    Wan, G.J.2    Leng, Y.3    Leng, Y.X.4    Sun, H.5    Yang, P.6    Chen, J.Y.7    Wang, J.8    Chu, P.K.9
  • 13
  • 14
    • 18644362747 scopus 로고    scopus 로고
    • Insulator surface charging and dissipation during plasma immersion ion implantation using a thin conductive surface film
    • T. W. H. Oates and M. M. M. Bilek, "Insulator surface charging and dissipation during plasma immersion ion implantation using a thin conductive surface film," J. Appl. Phys., vol. 92, pp. 2980-2983, 2002.
    • (2002) J. Appl. Phys. , vol.92 , pp. 2980-2983
    • Oates, T.W.H.1    Bilek, M.M.M.2
  • 15
    • 0035151263 scopus 로고    scopus 로고
    • PBII processing of dielectric layers: Physical aspects limitations and experimental results
    • A. Lacoste, F. LeCoeur, Y. Arnal, J. Pelletier, and C. Grattepain, "PBII processing of dielectric layers: Physical aspects limitations and experimental results," Surf. Coat. Technol., vol. 135, pp. 268-273, 2000.
    • (2000) Surf. Coat. Technol. , vol.135 , pp. 268-273
    • Lacoste, A.1    LeCoeur, F.2    Arnal, Y.3    Pelletier, J.4    Grattepain, C.5
  • 16
    • 0001456055 scopus 로고
    • Model for expanding sheaths and surface charging at dielectric surfaces during plasma source ion implantation
    • G. A. Emmert, "Model for expanding sheaths and surface charging at dielectric surfaces during plasma source ion implantation," J. Vac. Sci. Technol. B, vol. 12, pp. 880-883, 1994.
    • (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 880-883
    • Emmert, G.A.1
  • 17
    • 0030387632 scopus 로고    scopus 로고
    • Plasma immersion ion implantation with dielectric substrates
    • Dec
    • B. P. Linder and N. W. Cheung, "Plasma immersion ion implantation with dielectric substrates," IEEE Trans. Plasma Sci., vol. 24, pp. 1383-1388, Dec. 1996.
    • (1996) IEEE Trans. Plasma Sci. , vol.24 , pp. 1383-1388
    • Linder, B.P.1    Cheung, N.W.2
  • 18
    • 0029371317 scopus 로고
    • Charging effects in plasma immersion ion implantation for microelectronics
    • S. Qin, J. D. Bernstein, Z. F. Zhao, W. Liu, and C. Chan, "Charging effects in plasma immersion ion implantation for microelectronics," J. Vac. Sci. Technol. B, vol. 13, pp. 1994-1998, 1995.
    • (1995) J. Vac. Sci. Technol. B , vol.13 , pp. 1994-1998
    • Qin, S.1    Bernstein, J.D.2    Zhao, Z.F.3    Liu, W.4    Chan, C.5
  • 19
    • 0037525364 scopus 로고    scopus 로고
    • Electric probe measurements of high-voltage sheath collapse in cathodic arc plasmas due to surface charging of insulators
    • June
    • T. W. H. Oates, J. Pigott, D. R. McKenzie, and M. M. M. Bilek, "Electric probe measurements of high-voltage sheath collapse in cathodic arc plasmas due to surface charging of insulators," IEEE Trans. Plasma Sci., vol. 31, pp. 438-443, June 2003.
    • (2003) IEEE Trans. Plasma Sci. , vol.31 , pp. 438-443
    • Oates, T.W.H.1    Pigott, J.2    McKenzie, D.R.3    Bilek, M.M.M.4
  • 20
    • 0031121152 scopus 로고    scopus 로고
    • Optimizing high efficient plasma immersion ion implantation hydrogenation for poly-Si thin film transistors
    • S. Qin, Y. Z. Zhou, T. Nakatsugawa, and C. Chan, "Optimizing high efficient plasma immersion ion implantation hydrogenation for poly-Si thin film transistors," Nucl. Instrum. Meth. B, vol. 124, pp. 69-75, 1997.
    • (1997) Nucl. Instrum. Meth. B , vol.124 , pp. 69-75
    • Qin, S.1    Zhou, Y.Z.2    Nakatsugawa, T.3    Chan, C.4
  • 21
    • 0000669222 scopus 로고    scopus 로고
    • Particle-in-cell and Monte-Carlo simulation of the hydrogen plasma immersion ion implantation process
    • T. K. Kwok, P. K. Chu, B. P. Wood, and C. Chan, "Particle-in-cell and Monte-Carlo simulation of the hydrogen plasma immersion ion implantation process," J. Appl. Phys., vol. 86, pp. 1817-1821, 1999.
    • (1999) J. Appl. Phys. , vol.86 , pp. 1817-1821
    • Kwok, T.K.1    Chu, P.K.2    Wood, B.P.3    Chan, C.4
  • 22
    • 0001202485 scopus 로고    scopus 로고
    • Effect of target size on dose uniformity in plasma-based ion implantation
    • T. E. Sheridan, "Effect of target size on dose uniformity in plasma-based ion implantation," J. Appl. Phys., vol. 81, pp. 7153-7157, 1997.
    • (1997) J. Appl. Phys. , vol.81 , pp. 7153-7157
    • Sheridan, T.E.1
  • 23
    • 0000591527 scopus 로고    scopus 로고
    • Simulation of trench homogeneity in plasma immersion ion implantation
    • G. Keller, U. Rude, L. Stals, S. Mandl, and B. Rauschenbach, "Simulation of trench homogeneity in plasma immersion ion implantation," J. Appl. Phys., vol. 88, pp. 1111-1117, 2000.
    • (2000) J. Appl. Phys. , vol.88 , pp. 1111-1117
    • Keller, G.1    Rude, U.2    Stals, L.3    Mandl, S.4    Rauschenbach, B.5
  • 24
    • 0000685709 scopus 로고    scopus 로고
    • Efficacy of high-frequency low-voltage plasma immersion ion implantation of bar-shaped target
    • X. B. Tian, Z. M. Zeng, X. C. Zeng, B. Y. Tang, and P. K. Chu, "Efficacy of high-frequency low-voltage plasma immersion ion implantation of bar-shaped target," J. Appl. Phys., vol. 88, pp. 2221-2225, 2000.
    • (2000) J. Appl. Phys. , vol.88 , pp. 2221-2225
    • Tian, X.B.1    Zeng, Z.M.2    Zeng, X.C.3    Tang, B.Y.4    Chu, P.K.5
  • 25
    • 0037065104 scopus 로고    scopus 로고
    • Multiple ion-focus effects in plasma immersion ion implantation
    • X. B. Tian and P. K. Chu, "Multiple ion-focus effects in plasma immersion ion implantation," Appl. Phys. Lett., vol. 81, pp. 3744-3746, 2002.
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 3744-3746
    • Tian, X.B.1    Chu, P.K.2
  • 27
    • 0041375588 scopus 로고    scopus 로고
    • Enhancement of implantation energy using a conducting grid in plasma ion implantation of dielectric/polymeric materials
    • R. K. Y. Fu, X. B. Tian, and P. K. Chu, "Enhancement of implantation energy using a conducting grid in plasma ion implantation of dielectric/polymeric materials," Rev. Sci. Instrum., vol. 70, pp. 3697-3700, 2003.
    • (2003) Rev. Sci. Instrum. , vol.70 , pp. 3697-3700
    • Fu, R.K.Y.1    Tian, X.B.2    Chu, P.K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.