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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 124, Issue 1, 1997, Pages 69-75

Optimizing high efficient plasma immersion ion implantation hydrogenation for poly-Si thin film transistors

(4) Qin, Shu a Zhou, Yuanzhong a Nakatsugawa, Tomoya a Chan, Chung a

a Northeastern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; HYDROGENATION; ION IMPLANTATION; PASSIVATION; PLASMA SOURCES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON;

INDUCTIVELY COUPLED PLASMA SOURCES; PLASMA IMMERSION ION IMPLANTATION;

THIN FILM TRANSISTORS;

EID: 0031121152 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(97)00078-5 Document Type: Article

Times cited : (9)

References (15)

1
- 0019051719
- T.I. Kamins and P.J. Marcoux, IEEE Electron Device Lett. 1 (1980) 159.
- (1980) IEEE Electron Device Lett. , vol.1 , pp. 159
- Kamins, T.I.¹ Marcoux, P.J.²

2
- 0026140319
- I. Wu, T. Huang, W.B. Jackson, A.G. Lewis and A. Chiang, IEEE Electron Device Lett. 12 (1991) 181.
- (1991) IEEE Electron Device Lett. , vol.12 , pp. 181
- Wu, I.¹ Huang, T.² Jackson, W.B.³ Lewis, A.G.⁴ Chiang, A.⁵

3
- 21544464386
- R.A. Ditzio, G. Liu, S.J. Fonash, B.C. Hseih and D.W. Greve, Appl. Phys. Lett. 56 (1990) 1140.
- (1990) Appl. Phys. Lett. , vol.56 , pp. 1140
- Ditzio, R.A.¹ Liu, G.² Fonash, S.J.³ Hseih, B.C.⁴ Greve, D.W.⁵

4
- 0027606643
- K. Baert, H. Murai, K. Kobayashi, H. Namizaki and M. Nunoshita, Japan. J. Appl. Phys. 32 (1993) 2601.
- (1993) Japan. J. Appl. Phys. , vol.32 , pp. 2601
- Baert, K.¹ Murai, H.² Kobayashi, K.³ Namizaki, H.⁴ Nunoshita, M.⁵

5
- 0029392946
- J.D. Bernstein, S. Qin, C. Chan, and T.-J. King, IEEE Electron Device Lett. 16 (1995) 421.
- (1995) IEEE Electron Device Lett. , vol.16 , pp. 421
- Bernstein, J.D.¹ Qin, S.² Chan, C.³ King, T.-J.⁴

6
- 0030287461
- J.D. Bernstein, S. Qin, C. Chan and T.-J. King, IEEE Trans. on Electron Devices 43 (1996) 1876.
- (1996) IEEE Trans. on Electron Devices , vol.43 , pp. 1876
- Bernstein, J.D.¹ Qin, S.² Chan, C.³ King, T.-J.⁴

7
- 0029710415
- S. Qin, J.D. Bernstein, Y. Zhou, W. Liu, C. Chan and T.-J. King, Mater. Res. Soc. Symp. Proc., MRS 396 (1996) 515.
- (1996) Mater. Res. Soc. Symp. Proc., MRS , vol.396 , pp. 515
- Qin, S.¹ Bernstein, J.D.² Zhou, Y.³ Liu, W.⁴ Chan, C.⁵ King, T.-J.⁶

8
- 0026941927
- S. Qin, N. McGruer, C. Chan and K. Warner, IEEE Trans. Electr. Devices 39 (1992) 2354.
- (1992) IEEE Trans. Electr. Devices , vol.39 , pp. 2354
- Qin, S.¹ McGruer, N.² Chan, C.³ Warner, K.⁴

9
- 0000430498
- S. Qin and C. Chan, J. Vac. Sci. Technol. B 12 (1994) 962.
- (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 962
- Qin, S.¹ Chan, C.²

10
- 0026370907
- S. Qin, C. Chan, N. McGruer, J. Browning, and K. Warner, IEEE Trans. Plasma Sci. 19 (1991) 1272.
- (1991) IEEE Trans. Plasma Sci. , vol.19 , pp. 1272
- Qin, S.¹ Chan, C.² McGruer, N.³ Browning, J.⁴ Warner, K.⁵

11
- 4043180062
- S. Qin, Z. Jin, and C. Chan, J. Appl. Phys. 78 (1995) 55.
- (1995) J. Appl. Phys. , vol.78 , pp. 55
- Qin, S.¹ Jin, Z.² Chan, C.³

12
- 0000838953
- S. Qin, C. Chan, and Z. Jin, J. Appl. Phys. 79 (1996) 3432.
- (1996) J. Appl. Phys. , vol.79 , pp. 3432
- Qin, S.¹ Chan, C.² Jin, Z.³

13
- 0029371317
- S. Qin, J. Bernstein, Z. Zhao, W. Liu, C. Chan, J. Shao and S. Denholm, J. Vac. Sci. Technol. 13 (1995) 1994.
- (1995) J. Vac. Sci. Technol. , vol.13 , pp. 1994
- Qin, S.¹ Bernstein, J.² Zhao, Z.³ Liu, W.⁴ Chan, C.⁵ Shao, J.⁶ Denholm, S.⁷

14
- 0002948163
- S. Qin, J.D. Bernstein and C. Chan, J. Electron. Mater. 25 (1996) 507.
- (1996) J. Electron. Mater. , vol.25 , pp. 507
- Qin, S.¹ Bernstein, J.D.² Chan, C.³

15
- 0000340744
- T.-J. King, M.G. Hack and I. Wu, J. Appl. Phys. 17 (1994) 908.
- (1994) J. Appl. Phys. , vol.17 , pp. 908
- King, T.-J.¹ Hack, M.G.² Wu, I.³

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