CD-SEM-based critical shape metrology of integrated circuits

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 1, 2004, Pages 605-613

  Gorelikov, Dmitry V ^a   Remillard, Jason ^a   Sullivan, Neal T ^a  

^a Soluris Inc   (United States)

Author keywords

CD bias; CD SEM; Critical Shape Metrology; CSM; MBL; Model based library; Monte Carlo; Sidewall angle

Indexed keywords

CRITICAL SHAPE METROLOGY; OPTICAL SCATTEROMETRY; SIDEWALL ANGLES;

ALGORITHMS; COMPUTER SIMULATION; ELECTRON MICROSCOPES; MONTE CARLO METHODS; REAL TIME SYSTEMS; REGRESSION ANALYSIS; SCANNING ELECTRON MICROSCOPY;

INTEGRATED CIRCUITS;

EID: 4344570574     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536499     Document Type: Conference Paper

References (20)

1. SEMI P19-92, "Specification for metrology pattern cells for integrated circuit manufacture", 1996
2. F. Askary and N. T. Sullivan, "The Importance of Measurement Accuracy in Statistical Process Control", Proc. SPIE 3998, pp. 546-554 (2000)
3. J. M. McIntosh et al., "Approach to CD SEM metrology utilizing the full waveform signal" Proc. SPIE 3332, pp. 51-60 (1998)
4. J. M. McIntosh et al., "Dimensional Metrology System of Shape and Scale in Pattern Transfer", Proc. SPIE 3998, pp. 206-217 (2000)
5. B. Choo, et al., "Automated Process Control Monitor for 0.18 μm Technology and Beyond", Proc. SPIE 3998, pp. 218-226 (2000)
6. J. Allgair et al., "Feature Integrity Monitoring for Process Control Using a CD SEM", Proc. SPIE 3998, pp. 227-231 (2000)
7. J. R. Lowney, "Monte Carlo Simulation of Scanning Electron Microscope Signals for Lithographic Metrology", Scanning 18, pp. 301-306 (1996)
8. M. P. Davidson and N. T. Sullivan, "Monte Carlo simulation for CD SEM calibration and algorithm development", Proc. SPIE 2439, pp. 334-344 (1995)
9. M. P. Davidson and A. E. Vladar, "An Inverse Scattering Approach to SEM Line Width Measurements", Proc. SPIE 3677, pp. 640-649 (1999)
10. J. S. Villarrubia et al.,"Edge Determination for Polycrystalline Silicon Lines on Gate Oxide", Proc. SPIE 4344, pp. 147-156 (2001)
11. R. Dixson et al., "Toward Traceablity for At Line AFM Dimensional Metrology", Proc. SPIE 4689, pp. 313-335 (2002). For latest data, see R. Dixson and A. Guerry, "Reference metrology using a next generation CD-AFM", Proc. SPIE (2004) (in press)
12. R. Dixson et al., "Toward Traceablity for At Line AFM Dimensional Metrology", Proc. SPIE 4689, pp. 313-335 (2002). For latest data, see R. Dixson and A. Guerry, "Reference metrology using a next generation CD-AFM", Proc. SPIE (2004) (in press)
13. V.A. Ukraintsev, "Effect of bias variation on total uncertainty of CD measurements", Proc. SPIE 5038, pp. 644-650 (2003)
14. J. S. Villarrubia et al., "A Simulation Study of repeatability and Bias in the CD-SEM", Proc. SPIE 5038, pp. 138-149 (2003)
15. N. T. Sullivan et al., "Electron Beam Metrology of 193 nm Resists at Ultra Low Voltage", Proc. SPIE 5038, pp. 483-492 (2003), also see G. Sundaram et. al., Proc. SPIE (2004) (in press)
16. N. T. Sullivan et al., "Electron Beam Metrology of 193 nm Resists at Ultra Low Voltage", Proc. SPIE 5038, pp. 483-492 (2003), also see G. Sundaram et. al., Proc. SPIE (2004) (in press)
17. J. S. Villarrubia et al., "Scanning electron microscope analog of scatterometry", Proc. SPIE 4689, pp. 304-312 (2002)
18. University of Wisconsin CS Department, http://www.cs.wisc.edu/condor/
19. Chas Archie, private communications and Excel TMU calculation template, also see W. Lu et. al., "Total measurement uncertainty and total process precision evaluation of a structural metrology approach to measuring hard mask at post-metal CMP", Proc. SPIE (2004) (in press)
20. Chas Archie, private communications and Excel TMU calculation template, also see W. Lu et. al., "Total measurement uncertainty and total process precision evaluation of a structural metrology approach to measuring hard mask at post-metal CMP", Proc. SPIE (2004) (in press)