Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

Science in China, Series G: Physics, Mechanics and Astronomy

Volumn 50, Issue 3, 2007, Pages 281-286

  Peng, Xingping ^a   Wang, Zhiguang ^a   Song, Yin ^a   Ji, Tao ^b   Zang, Hang ^a   Yang, Yinghu ^b   Jin, Yunfan ^a  

^a INSTITUTE OF MODERN PHYSICS   (China)

^b LANZHOU UNIVERSITY   (China)

Author keywords

PL spectra; RF reactive sputtering; Substrate temperature; XRD spectra; ZnO films

Indexed keywords

EMISSION SPECTROSCOPY; LIGHT EMISSION; LUMINESCENCE; METALLIC FILMS; METEOROLOGICAL INSTRUMENTS; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; OXIDE FILMS; OXIDES; PHOTOELECTRON SPECTROSCOPY; RADIO WAVES; SEMICONDUCTING ZINC COMPOUNDS; STRUCTURAL PROPERTIES; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

(100) SILICON; (PL) PROPERTIES; BLUE EMISSIONS; C -AXIS; C AXIS ORIENTATIONS; PHOTO-LUMINESCENT PROPERTIES; PREFERRED ORIENTATION (PO); RADIO FREQUENCY (RF); RADIO-FREQUENCY REACTIVE SPUTTERING; ROOM TEMPERATURE PHOTOLUMINESCENCE (RTPL) SPECTRUM; SMALL STRAINS; SPUTTERING POWERS; SUBSTRATE TEMPERATURE (ST); X RAY PHOTOELECTRON SPECTROSCOPY (XPS); X-RAY DIFFRACTOMETER (XRD); ZINC OXIDE FILMS; ZNO FILMS;

REACTIVE SPUTTERING;

EID: 43249128771     PISSN: 16721799     EISSN: 18622844     Source Type: Journal    
DOI: 10.1007/s11433-007-0007-0     Document Type: Article

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