SCOPUS 정보 검색 플랫폼

Volumn 254, Issue 14, 2008, Pages 4308-4312

Gd-doping of HfO2

(8) Ketsman, Ihor a Losovyj, Ya B a,b Sokolov, A a Tang, Jinke c Wang, Zhenjun c Natta, M L a Brand, J I a Dowben, P A a

a UNIVERSITY OF NEBRASKA LINCOLN (United States)

b LOUISIANA STATE UNIVERSITY (United States)

c UNIVERSITY OF WYOMING (United States)

Author keywords

Gd doping; Hafnium oxide; Oxide dielectric layers; Resonant photoemission

Indexed keywords

DIELECTRIC FILMS; DOPING (ADDITIVES); ELECTRONIC DENSITY OF STATES; NEUTRON IRRADIATION; PHOTOEMISSION;

HAFNIUM OXIDE; OXIDE DIELECTRIC LAYERS; RESONANT PHOTOEMISSION;

HAFNIUM COMPOUNDS;

EID: 43049084767 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2008.01.060 Document Type: Article

Times cited : (8)

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