Maximum achievable aspect ratio in deep reactive ion etching of silicon due to aspect ratio dependent transport and the microloading effect

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 2319-2329

  Yeom, Junghoon ^a   Wu, Yan ^a   Selby, John C ^a   Shannon, Mark A ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP REACTIVE ION ETCHING; FLUOROCARBON POLYMERS; MICROLOADING; SILICON TRENCH;

DEPOSITION; ETCHING; FLUOROCARBONS; MATHEMATICAL MODELS; PASSIVATION; POLYMERS;

SILICON;

EID: 29044446773     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2101678     Document Type: Article

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