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Volumn 25, Issue 6 SUPPL. 2, 2006, Pages 51-54

Study on release rate of latent heat in Czochralski silicon growth

Author keywords

CZSi; double heater; heat shield; latent heat; numerical simulation

Indexed keywords

COMPUTER SIMULATION; GROWTH (MATERIALS); SILICON; THERMAL EFFECTS; THERMAL INSULATING MATERIALS;

EID: 42949136404     PISSN: 10010521     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1001-0521(08)60051-0     Document Type: Article
Times cited : (7)

References (10)
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    • Effects of a heat shield on pull speed and oxygen conceotration in a ϕ200 mm CZSi
    • Bingyan Ren Long Zhao Effects of a heat shield on pull speed and oxygen conceotration in a ϕ200 mm CZSi J. Chinese Journal of Semiconductors 26 2005 1764
    • (2005) J. Chinese Journal of Semiconductors , vol.26 , pp. 1764
    • Ren, Bingyan1    Zhao, Long2
  • 2
    • 0036680164 scopus 로고    scopus 로고
    • Simulation of large-scale silicon melt flow in magnetic Czochralski growth
    • V. Savolainen J. Heikonen J. Ruokolainen Simulation of large-scale silicon melt flow in magnetic Czochralski growth Journal of Crystal Growth 243 2002 243
    • (2002) Journal of Crystal Growth , vol.243 , pp. 243
    • Savolainen, V.1    Heikonen, J.2    Ruokolainen, J.3
  • 3
    • 0032598206 scopus 로고    scopus 로고
    • Comparison of three turbulence models for simulation of melt convection in Czochralski crystal growth of silicon
    • Lipchin Aleksey A Brown Robert Comparison of three turbulence models for simulation of melt convection in Czochralski crystal growth of silicon Journal of Crystal Growth 205 1999 71
    • (1999) Journal of Crystal Growth , vol.205 , pp. 71
    • Aleksey, Lipchin1    Brown Robert, A2
  • 4
    • 0033885247 scopus 로고    scopus 로고
    • Thermal history simulation of Czochralski silicon crystals and its application to the study of defects formation during crystal growth
    • P. Hopfgartner P. Collareta M. Porrini Thermal history simulation of Czochralski silicon crystals and its application to the study of defects formation during crystal growth Materials Science and Engineering B73 2000 158
    • (2000) Materials Science and Engineering , vol.B73 , pp. 158
    • Hopfgartner, P.1    Collareta, P.2    Porrini, M.3
  • 5
    • 0037850714 scopus 로고    scopus 로고
    • The marangoni convection and the oxygen concentration in Czochralski-silicon grow
    • Yuesheng Xu CaiCho Liu Haiyun Wang The marangoni convection and the oxygen concentration in Czochralski-silicon grow J. Cryst. Growth 254 2003 298
    • (2003) J. Cryst. Growth , vol.254 , pp. 298
    • Xu, Yuesheng1    Liu, CaiCho2    Wang, Haiyun3
  • 6
    • 15944415400 scopus 로고    scopus 로고
    • 3D global analysis of CZ-Si growth in a transverse magnetic field with various crystal growth rates
    • Lijun Liu Koichi Kakimoto 3D global analysis of CZ-Si growth in a transverse magnetic field with various crystal growth rates J. Cryst. Growth 275 2005 e1521
    • (2005) J. Cryst. Growth , vol.275 , pp. e1521
    • Liu, Lijun1    Kakimoto, Koichi2
  • 7
    • 33746673232 scopus 로고    scopus 로고
    • A numerical simulation study for the Czochralski growth process of Si under magnetic field
    • S. Jana S. Dost V. Kumar A numerical simulation study for the Czochralski growth process of Si under magnetic field International Journal of Engineering Science 44 2006 554
    • (2006) International Journal of Engineering Science , vol.44 , pp. 554
    • Jana, S.1    Dost, S.2    Kumar, V.3
  • 8
    • 0027904378 scopus 로고
    • Quantitative assessment of an integrated hydrodynamic thermal capillary model for large-diameter Czochralski growth of silicon: comparison of predicted temperature field with experiment
    • T.A. Kinney D.E. Bornside R.A. Brown Quantitative assessment of an integrated hydrodynamic thermal capillary model for large-diameter Czochralski growth of silicon: comparison of predicted temperature field with experiment J. Cryst. Growth 126 1993 413
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    • Kinney, T.A.1    Bornside, D.E.2    Brown, R.A.3
  • 9
    • 0032117066 scopus 로고    scopus 로고
    • Global analysis of heat transferin Si CZ furnace with specular and diffuse surfaces
    • Hahn Seung-Ho Tsukada Takao Hozawa Mitsunori Global analysis of heat transferin Si CZ furnace with specular and diffuse surfaces J. Cryst. Growth 191 1998 413
    • (1998) J. Cryst. Growth , vol.191 , pp. 413
    • Seung-Ho, Hahn1    Takao, Tsukada2    Mitsunori, Hozawa3
  • 10
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    • D.L. Que X.Z. Chen D.L. Que X.Z. Chen Science and Technology on Silicon Materials 2000 Zhejiang University Press Hangzhou, Zhejiang 194
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    • Que, D.L.1    Chen, X.Z.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.