3D global analysis of CZ-Si growth in a transverse magnetic field with various crystal growth rates

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Liu, Lijun ^a   Kakimoto, Koichi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

A1. Computer simulation; A1. Interfaces; A1. Magnetic fields; A2. Magnetic field assisted Czochralski method; B2. Semiconducting silicon

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; HEATING EQUIPMENT; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; THERMAL EFFECTS;

CRYSTAL GROWTH RATE; INTERFACES; MAGNETIC FIELD ASSISTED CZOCHRALSKI METHOD; THREE DIMENSIONAL (3D) MELTING;

CRYSTAL GROWTH;

EID: 15944415400     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.185     Document Type: Conference Paper

References (12)

1. H. Hirata, and K. Hoshikawa J. Crystal Growth 96 1989 747
2. P. Sabhapathy, and M.E. Salcudean J. Crystal Growth 113 1991 164
3. K. Kakimoto, K.Y. Yi, and M. Eguchi J. Crystal Growth 163 1996 238
4. K. Kakimoto J. Crystal Growth 237-239 2002 1785
5. K. Kakimoto J. Crystal Growth 243 2002 55
6. O. Grabner, and G. Muller Microelectron. Eng. 56 2001 83
7. H. Ozoe, and M. Iwamoto J. Crystal Growth 142 1994 236
8. K. Kakimoto J. Crystal Growth 237-239 2002 1785
9. A. Krauze J. Crystal Growth 262 2004 157
10. A. Krauze J. Crystal Growth 265 2004 14
11. L. Liu, K. Kakimoto, Int. J. Heat Mass Transfer (2004), accepted for publication.
12. F. Dupret Int. J. Heat Mass Transfer 33 1990 1849