Effects of a heat shield on pull speed and oxygen concentration in a Φ200 mm CZSi

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 9, 2005, Pages 1764-1767

  Ren, Bingyan ^a   Zhao, Long ^a   Fu, Hongbo ^a   Cao, Zhongqian ^b   Zhang, Xueqiang ^b  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^b Hebei Jinglong Industry Group   (China)

Author keywords

Heat shield; Oxygen concentration; Pull speed; Temperature gradient

Indexed keywords

COMPUTER SIMULATION; HEAT SHIELDING; OXYGEN; SEMICONDUCTING SILICON; SILICON SOLAR CELLS; SINGLE CRYSTALS;

CZOCHRALSKI SILICON (CZSI); HEAT SHIELD; HOT ZONE; NUMERICAL SIMULATION; OXYGEN CONCENTRATION; PULL SPEED;

CRYSTAL GROWTH FROM MELT;

EID: 30044450985     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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