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Volumn 205, Issue 1, 1999, Pages 71-91

Comparison of three turbulence models for simulation of melt convection in Czochralski crystal growth of silicon

Author keywords

[No Author keywords available]

Indexed keywords

BUOYANCY; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; FINITE VOLUME METHOD; HEAT CONVECTION; OXYGEN; REYNOLDS NUMBER; TEMPERATURE; TURBULENCE;

EID: 0032598206     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00242-0     Document Type: Article
Times cited : (67)

References (52)
  • 2
    • 0344778877 scopus 로고    scopus 로고
    • Silicon materials science and technology
    • T. Abe, Silicon materials science and technology, Electrochemical Society Proceedings, Vol. 98-1, 1998, p. 157.
    • (1998) Electrochemical Society Proceedings , vol.98 , Issue.1 , pp. 157
    • Abe, T.1
  • 50
    • 85031630998 scopus 로고    scopus 로고
    • private communication
    • T. Mori, R.A. Brown, private communication, 1996.
    • (1996)
    • Mori, T.1    Brown, R.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.