Thermal history simulation of Czochralski silicon crystals and its application to the study of defects formation during crystal growth

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 158-162

  Hopfgartner, P ^a   Collareta, P ^a   Porrini, M ^a  

^a MEMC Electronic Materials   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; FINITE ELEMENT METHOD; LIGHT SCATTERING; MATHEMATICAL MODELS; OXYGEN; PHYSICAL PROPERTIES; PRECIPITATION (CHEMICAL); TEMPERATURE DISTRIBUTION; THERMODYNAMIC PROPERTIES;

CRYSTAL QUALITY; THERMAL HISTORY;

SILICON WAFERS;

EID: 0033885247     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00449-3     Document Type: Article

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