Global analysis of heat transfer in Si CZ furnace with specular and diffuse surfaces

Journal of Crystal Growth

Volumn 191, Issue 3, 1998, Pages 413-420

  Hahn, Seung Ho ^a   Tsukada, Takao ^a   Hozawa, Mitsunori ^a   Maruyama, Shigenao ^a   Imaishi, Nobuyuki ^b   Kitagawa, Sadao ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c Japan Space Utiliz Promotion Center   (Japan)

Author keywords

Czochralski method; Global analysis; Radiative heat transfer; Silicon; Specular reflection

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; FINITE ELEMENT METHOD; HEAT RADIATION; SURFACE PROPERTIES; THERMAL DIFFUSION IN SOLIDS;

GLOBAL ANALYSIS; SPECULAR REFLECTION;

SEMICONDUCTING SILICON;

EID: 0032117066     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00213-9     Document Type: Article

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