Properties and formation mechanism of tetrainterstitial agglomerates in hydrogen-doped silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 20, 2004, Pages

  Mchedlidze, Teimuraz ^a,b   Suesawa, Masashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; SILICON;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL BOND; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRICITY; ELECTRON SPIN RESONANCE; IRRADIATION; STRUCTURE ANALYSIS;

EID: 42749108444     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.205203     Document Type: Article

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