Complexes of point defects and impurities in electron-irradiated n-type Cz-Si pre-doped with hydrogen

Physica Status Solidi (B) Basic Research

Volumn 235, Issue 1, 2003, Pages 115-120

  Nakanishi, A ^a   Fukata, N ^a   Suezawa, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ACTIVATION ENERGY; ANNEALING; CRYSTAL IMPURITIES; CRYSTALS; IRRADIATION; LIGHT ABSORPTION; POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

FRENKEL PAIRS (FP); ISOCHRONAL ANNEALING;

CRYSTAL GROWTH FROM MELT;

EID: 1242265026     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200301538     Document Type: Conference Paper

References (10)

1. J. W. Corbett, Electron Radiation Damage in Semiconductors and Metals, Solid State Physics, Suppl. 7, edited by F. Seitz and D. Turnbull (Academic Press, New York, 1966); and references therein.
2. J. Bourgoin and J. W. Corbett, Phys. Lett. 38A, 135 (1972).
3. M. Suezawa, Jpn. J. Appl. Phys. 38, L608 (1999).
4. M. Suezawa, Phys. Rev. B 63, 035201 (2001).
5. M. Suezawa, Phys. Rev. B 63, 035203 (2001).
6. A. Nakanishi, M. Suezawa, and N. Fukata, Jpn. J. Appl. Phys. 41, 3629 (2002).
7. R. E. Pritchard, M. J. Ashwin, J. H. Tucker, R. C. Newman, E. C. Lightowlers, M. J. Binns, S. A. McQuaid, and R. Falster, Phys. Rev. B 56, 13118 (1997).
8. B. G. Svensson and J. L. Lindstroem, J. Appl. Phys. 72, 5616 (1992).
9. V. P. Markevich, L. I. Murin, M. Suezawa, J. L. Lindstroem, J. Coutinho, R. Jones, P. R. Briddon, and S. Oeberg, Phys. Rev. B 61, 12964 (2000).
10. V. P. Markevich and M. Suezawa, J. Appl. Phys. 83, 2988 (1998).