Minute sige quantum dots on Si(001) by a kinetic 3D Island mode

Physical Review Letters

Volumn 87, Issue 13, 2001, Pages

  Koch, R ^a   Wedler, G ^b   Schulz, J J ^a,b   Wassermann, B ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b FREIE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DISLOCATIONS (CRYSTALS); MONOLAYERS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRESS ANALYSIS; SUBSTRATES; THICKNESS MEASUREMENT;

FILM THICKNESS; STRANSKI-KRASTANOV SYSTEM; STRESS MEASUREMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 42749106913     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.87.136104     Document Type: Article

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