On the role of interdiffusion during the growth of Ge on Si(001) and Si(111)

Diffusion and Defect Data. Pt A Defect and Diffusion Forum

Volumn 183, Issue , 2000, Pages 95-102

  Koch, R ^a   Wassermann, B ^a   Wedler, G ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELASTICITY; EPITAXIAL GROWTH; FILM GROWTH; INTERDIFFUSION (SOLIDS); POINT DEFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; STRAIN; STRESS ANALYSIS;

STRAIN RELAXATION; STRANSKI-KRASTANOW SYSTEMS;

SEMICONDUCTING FILMS;

EID: 0033697797     PISSN: 10120386     EISSN: None     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.183-185.95     Document Type: Article

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