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Applied Physics A: Materials Science and Processing

Volumn 69, Issue 4, 1999, Pages 467-470

Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures

(4) Walz, J a Hesjedal, T b Chilla, E b Koch, R a,b

a FREIE UNIVERSITÄT BERLIN (Germany)

b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; DISLOCATIONS (CRYSTALS); ENTROPY; INTERDIFFUSION (SOLIDS); SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STRAIN;

ISLANDING; STRANSKI-KRUSTANOW SYSTEM;

SEMICONDUCTING FILMS;

EID: 0032682927 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390051035 Document Type: Article

Times cited : (4)

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