Comparison of conventional surface cleaning methods for Si molecular beam epitaxy

Journal of the Electrochemical Society

Volumn 144, Issue 11, 1997, Pages 3765-3768

  Okumura, H ^a   Akane, T ^a   Tsubo, Y ^a   Matsumoto, S ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; MOLECULAR BEAM EPITAXY; OXYGEN; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SILICON; SURFACE ROUGHNESS;

SURFACE FLATNESS; SURFACE MICROROUGHNESS;

SURFACE CLEANING;

EID: 0031275256     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838088     Document Type: Review

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