Application of nano-EBIC to the characterization of GaAs and InP homojunctions

Nanotechnology

Volumn 19, Issue 15, 2008, Pages

  Smaali, K ^a   Troyon, M ^a  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAMS; INDIUM PHOSPHIDE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

CARRIER DIFFUSION; ELECTRON-BEAM-INDUCED CURRENT (EBIC); TIP-SAMPLE CONTACTS;

HETEROJUNCTIONS;

GALLIUM ARSENIDE; INDIUM; PHOSPHORUS;

ARTICLE; ATOMIC FORCE MICROSCOPY; DIODE; ELECTRON PROBE MICROANALYSIS; NANOANALYSIS; PHOTON; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY;

EID: 42549103711     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/15/155706     Document Type: Article

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