Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: Optoelectronic properties by electron beam induced current and cathodoluminescence

Microelectronics Journal

Volumn 30, Issue 4, 1999, Pages 413-417

  Romero, M J ^a   Araujo D ^a   Sanchez Rojas J L ^b   Calleja, E ^b   Munoz E ^b   Garcia R ^a  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL ORIENTATION; ELECTRON BEAMS; OPTOELECTRONIC DEVICES; PHOTODIODES; PIEZOELECTRIC MATERIALS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON BEAM INDUCED CURRENT (EBIC); NEGATIVE AVERAGE FIELD (NAF); POSITIVE AVERAGE FIELD (PAF);

HETEROJUNCTIONS;

EID: 0344287197     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(98)00145-1     Document Type: Article

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