Conducting atomic force microscopy study of phase transformation in silicon nanolndentation

Journal of Applied Physics

Volumn 96, Issue 6, 2004, Pages 3562-3564

  Ho, Shu Te ^a   Chang, Yu Hsien ^a   Lin, Hen Nan ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; ELECTRON TUNNELING; GOLD; HYDROFLUORIC ACID; INDENTATION; PHASE TRANSITIONS; SILICA; SURFACE PHENOMENA; SURFACES;

CONDUCTING ATOMIC FORCE MICROSCOPY (CAFM); FOWLER-NORDHEIM TUNNELING EQUATION; LOCAL CURRENT-VOLTAGE RELATIONSHIPS; NANOINDENTATION;

SILICON;

EID: 4944258932     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1780609     Document Type: Article

References (16)

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16. 2, the calculated current is in the range of μA from Eq. (1) and three orders of magnitude higher than the experimental values. It is also found that the calculated current value is in reasonable agreement with the measured values if a factor of 0.35, which represents the effects of the field enhancement and the image charge lowering, is multiplied into the exponential in Eq. (1). Using this value, the φ in Fig. 4(b) becomes 1.23 eV, which is twice as large as the previously obtained 0.61 eV.