Ferroelectricity and negative temperature coefficient of resistance in pulsed-laser-deposited (Pb,Sr)TiO3 films

Journal of Physics D: Applied Physics

Volumn 41, Issue 8, 2008, Pages

  Wang, Jyh Liang ^a   Lai, Yi Sheng ^b   Liou, Sz Chian ^c   Tsai, Chun Chien ^a   Chiou, Bi Shiou ^a   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNITED UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRICITY; PRESSURE EFFECTS; PULSED LASER DEPOSITION; SUBSTRATES; THERMAL EFFECTS; TITANIUM DIOXIDE;

FERROELECTRICITY TRANSITION; OXYGEN PRESSURE; PARAELECTRICITY;

METALLIC FILMS;

EID: 42549091442     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/8/085304     Document Type: Article

References (33)

1. Hamata Y, Takuchi H and Zomura K 1988 Japanese Patent No 63280401
2. Zhao J, Li L and Gui Z 2002 J. Eur. Ceram. Soc. 22 1171
3. Zhao J, Li L, Qi J and Gui Z 2002 J. Electroceram. 9 173
4. Lu Y Y and Tseng T Y 1998 Mater. Chem. Phys. 53 132
5. Wang D J, Qiu J, Guo Y C, Gui Z L and Li L T 1999 J. Mater. Res. 14 120
6. Chou C C, Chang H Y, Lin I N, Shaw B J and Tan J T 1998 Japan. J. Appl. Phys. 37 5269
7. Shye D C, Chiou B S, Kuo M W, Chen J S, Bruce C S, Chou C, Jan K, Wu M F and Cheng H C 2003 Electrochem. Solid State Lett. 6 G55
8. Horwitz J S, Chrisey D B, Dorsey P C, Knauss L A, Pond J M, Wilson M, Osofsky M S, Qadri S B, Caulfield J and Auyeung R C Y 1997 Nucl. Instrum. Methods Phys. Res. B 121 371
9. Karaki T and Adachi M 2005 Japan. J. Appl. Phys. 44 692
10. Nomura S and Sawada S 1955 J. Phys. Soc. Japan 10 108
11. Kang D H, Kim J H, Park J H and Yoon K H 2001 Mater. Res. Bull. 36 265
12. Zhang F, Karaki T and Adachi M 2005 Japan. J. Appl. Phys. 44 6995
13. Lim D G, Park Y, Moon S I and Yi J 2000 Applications of Ferroelectrics 2000, ISAF 2000, Proc. 2000 12th IEEE Int. Symp. (Honolulu, 2000) p 599
14. Chrisey D B and Huber G K 1992 Pulsed Laser Deposition of Thin Films (New York: Wiley-Interscience) pp 55-87
15. James A R and Prakash C 2004 Appl. Phys. Lett. 84 1165
16. Scarisoreanu N, Craciun F, Dinescu G, Verardi P and Dinescu M 2004 Thin Solid Films 453-454 399
17. Castro-Rodríguez R, Palomares-Snchez S, Watts B E and Leccabue F 2003 Mater. Lett. 57 3958
18. Gao X S, Xue J M, Li J, Ong C K and Wang J 2003 Microelectron. Eng. 66 926
19. Chou C C, Hou C S, Chang G C and Cheng H F 1999 Appl. Surf. Sci. 142 413
20. Chou C C, Hou C S and Cheng H F 1998 Ferroelectrics 206-207 393
21. Hou C S, Pan H C, Chou C C and Cheng H F 1999 Ferroelectrics 232 129
22. Wang D N, Hovmöller S, Kihlborg L and Sundberg M 1988 Ultramicroscopy 25 303
23. Li C L, Chen Z H, Zhou Y L and Cui1 D F 2001 J. Phys.: Condens. Matter 13 5261
24. Fuchs D, Adam M, Schweiss P, Gerhold S, Schuppler S, Schneider R and Obst B 2000 J. Appl. Phys. 88 1844
25. Kim I-D, Rothschild A and Tuller H L 2006 Appl. Phys. Lett. 88 072902
26. Heywang W 1961 Solid-State Electron. 3 51
27. Kittel C 1996 Introduction to Solid State Physics 7th edn (New York: Wiley)
28. Han W H, Chen X K, Xie E Q, Wu G, Yang J P, Wang R, Cao S Z and Wang Y L 2007 Surf. Coat. Technol. 201 5680
29. Lemee N, Dubourdieu C, Delabouglise G, Senateur J P and Laroudie F 2002 J. Cryst. Growth 235 347
30. Panda B, Roy A, Dhar A and Ray S K 2007 J. Appl. Phys. 101 064116
31. Okano M, Watanabe Y and Cheong S-W 2003 Appl. Phys. Lett. 82 1923
32. Hwang C S, Lee B T, Cho H J, Lee K H, Kang C S, Horii H, Lee S I and Lee M Y 1997 Appl. Phys. Lett. 71 371
33. Sze S M 1985 Physics of Semiconductor Devices 2nd edn (New York: Wiley)