Nonlinear positive temperature coefficient of resistance of BaTiO3 film

Applied Physics Letters

Volumn 82, Issue 12, 2003, Pages 1923-1925

  Okano, Motochika ^a   Watanabe, Yukio ^a   Cheong, Sang Wook ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM TITANATE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; ELECTROCHEMICAL ELECTRODES; EPITAXIAL GROWTH; FERROELECTRIC CERAMICS; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

TEMPERATURE COEFFICIENT;

METALLIC FILMS;

EID: 0037464213     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1563061     Document Type: Article

References (22)

1. See, for example, Q. Jianquan, Z. Qing, W. Yongli, W. Yajing, and L. Longtu, Solid State Commun. 120, 505 (2001); M. M. Gallego and A. R. West, J. Appl. Phys. 90, 394 (2001).
2. See, for example, Q. Jianquan, Z. Qing, W. Yongli, W. Yajing, and L. Longtu, Solid State Commun. 120, 505 (2001); M. M. Gallego and A. R. West, J. Appl. Phys. 90, 394 (2001).
3. W. Heywang, Solid-State Electron. 3, 51 (1961); G. H. Jonker, ibid. 7, 895 (1964).
4. W. Heywang, Solid-State Electron. 3, 51 (1961); G. H. Jonker, ibid. 7, 895 (1964).
5. I. Ueda and S. Ikegami, J. Phys. Soc. Jpn. 20, 546 (1965); S. Ikegami, I. Ueda, and Y. Ise, ibid. 16, 572 (1961); J. B. MacChesney and J. F. Potter, J. Am. Ceram. Soc. 48, 81 (1965).
6. I. Ueda and S. Ikegami, J. Phys. Soc. Jpn. 20, 546 (1965); S. Ikegami, I. Ueda, and Y. Ise, ibid. 16, 572 (1961); J. B. MacChesney and J. F. Potter, J. Am. Ceram. Soc. 48, 81 (1965).
7. I. Ueda and S. Ikegami, J. Phys. Soc. Jpn. 20, 546 (1965); S. Ikegami, I. Ueda, and Y. Ise, ibid. 16, 572 (1961); J. B. MacChesney and J. F. Potter, J. Am. Ceram. Soc. 48, 81 (1965).
8. M. Kuwarabara, K. Morino, and T. Matsunaga, J. Am. Ceram. Soc. 79, 997 (1996).
9. N. Lemée, C. Dubourdieu, G. Delabouglise, J. P. Sénateur, and R. Laroudie, J. Cryst. Growth 235, 347 (2002); M. N. Khan, H.-T. Kim, T. Kusawake, H. Kudo, K. Ohsima, and H. Uwe, J. Appl. Phys. 86, 2307 (1999).
10. N. Lemée, C. Dubourdieu, G. Delabouglise, J. P. Sénateur, and R. Laroudie, J. Cryst. Growth 235, 347 (2002); M. N. Khan, H.-T. Kim, T. Kusawake, H. Kudo, K. Ohsima, and H. Uwe, J. Appl. Phys. 86, 2307 (1999).
11. C. S. Hwang, B. T. Lee, H. J. Cho, K. H. Lee, C. S. Kang, H. Horii, S. I. Lee, and M. Y. Lee, Appl. Phys. Lett. 71, 371 (1997); Y. Watanabe, Phys. Rev. B 57, R5563 (1998).
12. C. S. Hwang, B. T. Lee, H. J. Cho, K. H. Lee, C. S. Kang, H. Horii, S. I. Lee, and M. Y. Lee, Appl. Phys. Lett. 71, 371 (1997); Y. Watanabe, Phys. Rev. B 57, R5563 (1998).
13. N. A. Pertsev, A. G. Zembilgotov, and A. K. Tagantsev, Phys. Rev. Lett. 80, 1988 (1998).
14. Y. Watanabe and A. Masuda, Jpn. J. Appl. Phys. 40, 5610 (2001).
15. Y. Watanabe, Phys. Rev. B 59, 11257 (1999).
16. +(V)]/2/(dV/dt).
17. K. Hamamoto and M. Kuwabara, Jpn. J. Appl. Phys. 40, L1163 (2001).
18. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
19. C. B. Parker, J.-P. Maria, and A. I. Kingon, Appl. Phys. Lett. 81, 340 (2002).
20. A. Erbil, Y. Kim, and R. A. Gerhardt, Phys. Rev. Lett. 77, 1628 (1996).
21. Y. Watanabe, D. Sawamura, and M. Okano, Appl. Phys. Lett. 72, 2415 (1998).
22. Y. Watanabe, M. Okano, and A. Masuda, Phys. Rev. Lett. 86, 332 (2001). Details of the experimental condition are similar to those in this Ref.