Ferroelectric Pb(Mg1/3Nb2/3)O3 thin films by PLD at varying oxygen pressures

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 926-932

  Gao, X S ^a   Xue, J M ^a   Li, J ^a   Ong, C K ^a   Wang, J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Ferroelectric properties; Pb(Mg1 3Nb2 3)O3 thin films; Pulsed laser deposition (PLD)

Indexed keywords

CERAMIC MATERIALS; DIFFRACTION; ELECTRIC SPACE CHARGE; FERROELECTRIC MATERIALS; LEAD COMPOUNDS; OXYGEN; PARTIAL PRESSURE; PERMITTIVITY; PEROVSKITE; POLARIZATION; PULSED LASER DEPOSITION;

SPACE CHARGE RELAXATION;

THIN FILMS;

EID: 0037391774     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)01022-5     Document Type: Conference Paper

References (23)

1. Yue Z.G. Ferroelectrics. 184:1996;193.
2. Jiang M.C., Hong T.J., Wu T.B. Jpn. J. Appl. Phys. 33:1994;6301.
3. Takeshima Y., Shiratsuyu P., Takagi H., Tomono K. Jpn. J. Appl. Phys. 34:1995;5083.
4. Bai G.R., Streiffer S.K., Baumann P.K., Stemmer S., Auciello O., Ghosh K., Munkholm A., Thompson C., Rao R.A., Eom C.B. Appl. Phys. Lett. 76:2000;3106.
5. Kighelman Z., Damjanovic D., Seifert A., Sagalowicz L., Setter N. Appl. Phys. Lett. 73:1998;2281.
6. Udayakumar K.R., Chen J., Schuele P.J., Cross L.E., Kumar V., Krupanidhi S.B. Appl. Phys. Lett. 60:1992;1187.
7. Tantigate C., Lee J., Safari A. Appl. Phys. Lett. 66:1995;1611.
8. Tyunina M., Levoska J., Sternberg A., Leppävuori S. J. Appl. Phys. 86:1999;5179.
9. Saenger K.L., Roy R.A., Beach D.B., Etzold K.F. Mater. Res. Soc. Symp. Proc. 285:1993;421.
10. Tyunina M., Levoska J. Phys. Rev. B. 63:2001;224102.
11. Nagarajan V., Ganpule C.S., Nagaraj B., Aggarwal S., Alpay S.P., Roytburd A.L., Williams E.D., Ramesh R. Appl. Phys. Lett. 75:1999;4183.
12. Bai G.R., Streiffer S.K., Baumann P.K., Auciello O., Ghosh K., Stemmer S., Munkholm A., Thompson C., Rao R.A., Eom C.B. Appl. Phys. Lett. 76:2000;3106.
13. Kighelman Z., Damjanovic D., Setter N. J. Appl. Phys. 90:2001;4682.
14. Zhao J., Glazounov A.E., Zhang Q.M. Appl. Phys. Lett. 74:1999;436.
15. Nagarajan V., Alpay S.P., Ganpule C.S., Nagaraj B.K., Aggarwal S., Williams E.D., Roytburd A.L., Ramesh R. Appl. Phys. Lett. 77:2000;438.
16. Vohra S.T., Fabiny L., Bucholtz F. Appl. Phys. Lett. 64:1994;848.
17. Catalan G., Corbett M.H., Bowman R.M., Gregg J.M. Appl. Phys. Lett. 74:1999;3035.
18. Swartz S.L., Shrout T.R. Mater. Res. Bull. 17:1982;1245.
19. Liu J.M., Ong C.K. J. Appl. Phys. 84:1998;5560.
20. Jonscher A.K. Dielectric Relaxation in Solids. 1983;Chelsea Dielectrics, London.
21. Jonscher A.K. Universal Relaxation Law. 1996;Chelsea Dielectrics, London.
22. Hou S.Y., Kwo J., Watts R.K., Cheng J.-Y., Fork D.K. Appl. Phys. Lett. 67:1995;1389.
23. Zhang Y., Shao Y., Tian J. J. Mater. Sci. Lett. 20:2001;335.