High negative temperature coefficient of resistance of heteroepitaxial (Ba, Sr) TiO3 single crystal films prepared by pulsed laser deposition

Surface and Coatings Technology

Volumn 201, Issue 9-11 SPEC. ISS., 2007, Pages 5680-5683

  Han, W H ^a   Chen, X K ^a,b   Xie, E Q ^a   Wu, G ^b   Yang, J P ^b   Wang, R ^b   Cao, S Z ^b   Wang, Y L ^c  

^a LANZHOU UNIVERSITY   (China)

^b National Key Laboratory of Surface Engineering   (China)

^c HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

(Ba, Sr) TiO3 film; Activation energy; Negative temperature coefficient of resistance; Oxygen vacancy; Thermal imaging

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; GRAIN BOUNDARIES; INFRARED IMAGING; NEGATIVE TEMPERATURE COEFFICIENT; POLYCRYSTALS; PULSED LASER DEPOSITION; THERMAL EFFECTS;

HETEROEPITAXIAL; OXYGEN VACANCY;

SINGLE CRYSTALS;

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; GRAIN BOUNDARIES; INFRARED IMAGING; NEGATIVE TEMPERATURE COEFFICIENT; POLYCRYSTALS; PULSED LASER DEPOSITION; SINGLE CRYSTALS; THERMAL EFFECTS;

EID: 33846552283     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2006.07.157     Document Type: Article

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