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Volumn 37, Issue 5, 2008, Pages 635-640

Formation of low-resistance ohmic contact by damage-proof selective-area growth of single-crystal n +-GaN using plasma-assisted molecular beam epitaxy

(4) Seo, Hui Chan a Hong, Seung Jae a Chapman, Patrick a Kim, Kyekyoon a

a University of Illinois at Urbana Champaign (United States)

Author keywords

Gallium nitride; Ohmic contact; Plasma assisted molecular beam epitaxy; Selective area growth

Indexed keywords

ETCHING DAMAGE; ETCHING TIME; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SELECTIVE-AREA GROWTH;

CONTACT RESISTANCE; CRYSTAL GROWTH; ETCHING; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; X RAY PHOTOELECTRON SPECTROSCOPY;

OHMIC CONTACTS;

EID: 42449136568 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-008-0390-y Document Type: Conference Paper

Times cited : (5)

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